Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate
نویسندگان
چکیده
منابع مشابه
Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces
0038-1101/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.sse.2010.06.008 * Corresponding author. E-mail address: [email protected] A novel device design for enhancement mode operation of III-nitride high electron mobility transistor (HEMT) structure has been proposed and demonstrated. The proposed HEMT device structure consists of a multi-heterojunction (SiO2/AlxGa1 xN/GaN/A...
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0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.09.033 ⇑ Corresponding author. Tel.: +91 11 24115580; fax E-mail addresses: [email protected] ( (R.S. Gupta). 1 Tel.: +91 11 24115580; fax: +91 11 24110606. In the work proposed, linearity performance of dual material gate (DMG) AlGaN/GaN HEMT has been analyzed and compared with the corresponding performance o...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B
سال: 2019
ISSN: 2166-2746,2166-2754
DOI: 10.1116/1.5066327